OVATM
Power Chip ELO-BCRExxx-x
LED Chip Diagram:
Features:
| Growth Technique |
MOCVD |
| Substrate |
Sapphire (0001) |
| Structure |
InGaN MQW |
| Chip size |
1000±30μm
x 1000 ±30μm |
| Wafer thickness |
150± 5 μm |
| Testing & sorting |
100 % |
| Packaging |
20cm±5mm x 20 cm±5mm
(blue tape medium tack) |
| Backside reflector |
Al metal |
Mechanical Dimensions :
| Au Pad thickness |
1.6±0.2 μm |
| Au Pad diameter |
P: 110 μ m / N: 120 μm |
Optical and Electrical characteristics
Ta=25C°, If=350mA
-ELO-BCREBLU-M
Bin
Number |
Blue
Brightness"-X mW"3 |
Dominant
Wavelength(nm) |
Vf
(V) |
|
-1 |
-2 |
-3 |
-4 |
-5 |
-6 |
Min |
Max |
Typ |
Max |
ELO-BCRE455-X |
- |
60~80 |
80~100 |
100~120 |
120~140 |
140~ |
455 |
460 |
3.7 |
4.0 |
ELO-BCRE460-X |
- |
60~80 |
80~100 |
100~120 |
120~140 |
140~ |
460 |
465 |
3.7 |
4.0 |
ELO-BCRE465-X |
- |
60~80 |
80~100 |
100~120 |
120~140 |
140~ |
465 |
470 |
3.7 |
4.0 |
ELO-BCRE470-X |
- |
60~80 |
80~100 |
100~120 |
120~140 |
140~ |
470 |
475 |
3.7 |
4.0 |
 |
|
|
|
|
|
|
|
|
|
|
Ta=25C°_If=350mA
- ELO-BCREGRN-M
Bin
Number |
Green
Brightness"-X mW"3 |
Dominant
Wavelength(nm) |
Vf
(V) |
-1 |
-2 |
-3 |
-4 |
-5 |
-6 |
Min |
Max |
Typ |
Max |
ELO-BCRE515-X |
- |
30~50 |
50~ |
- |
- |
- |
515 |
520 |
3.7 |
4.0 |
ELO-BCRE520-X |
- |
30~50 |
50~ |
- |
- |
- |
520 |
525 |
3.7 |
4.0 |
ELO-BCRE525-X |
- |
30~50 |
50~ |
- |
- |
- |
525 |
530 |
3.7 |
4.0 |
ELO-BCRE530-X |
- |
30~50 |
50~ |
- |
- |
- |
530 |
535 |
3.7 |
4.0 |
|
|
|
|
|
|
|
|
|
|
|
LED chips are sorted to the brightness, dominant wavelength bins
shown above. A blue tape will contain die from only one bin. Customer
order for part numbers ELO-BCREBLU-M and ELO-BCREGRN-M may consist
of dies from multiple blue tapes with any or all bins (ELO-BCRE4XX-X),
and (ELO-BCRE5XX-X) respectively.
Fig. 1 Forward Current vs. Forward Voltage
Fig. 2 Relative Luminous Intensity vs. Forward Current
(Device is tested under a probe station)
Fig. 1 Forward Current vs. Forward Voltage
Fig. 2 Relative Luminous Intensity vs. Forward Current
(Device is tested under a probe station)
Absolute maximum ratings:
| Parameter |
Symbol |
Unit |
Condition |
Rating |
| Forward DC
Current |
If |
mA |
Ta=25oC,
Rja <60oC/W |
400(*) |
| Reverse voltage |
Vr |
V |
Ta=25oC,
Ir = 10μA |
-5V |
| Junction Temperature |
Tj |
oC |
|
125 |
| Reverse Current |
Ir |
μA |
Vr = -5 V |
<10 |
| Assembly Process
Temperature |
|
oC |
|
250oC(<5
sec) |
(*) maximum driving current depends on operating temperature and
thermal
resistance of package
Fig. 3 Maximum derating forward DC current vs. Ambient
Temperature.
Derating based on Tj(max)=125°C
Remarks
1. eLite’s GaN LEDs are Class 1 ESD sensitive.
2. Contact eLite for assistance in improving the light extraction
efficiency of your package.
3. Brightness values are measured using Au plated TO39 headers without
an encapsulant.
|
